
If ‘e’ is the charge of carrier and ‘v’ the velocity, then Lorentz force acting on it due to magnetic field is given by,
Fm = -e(vxB)
Since v and B are perpendicular to each other,
Fm = -evB ---------- (1)
The electric field exerts a force on charge carriers. It is given by,
Fe = EHe --------- (2)
At equilibrium,
Fm = Fe
Ie, -evB = EHe
Or EH = -Bv -------- (3)
But current density J=nev where n is the electron density.
Or v = J/ne
Substituting this in equation (3),
EH = -BJ/ne
Or EH/BJ = -1/ne = RH --------- (4)
RH is called Hall coefficient.
If the carriers are holes,
RH = 1/pe --------- (5)
Where p is the hole density.
If ‘d’, ‘w’ and ‘A’ represent the thickness, width and area of cross section of the slab respectively, then,
EH = VH/d --------- (6)
J = I/A = I/wd --------- (7)
Substituting (6) and (7) in equation (4),
RH = EH/BJ = VHw/BI
Or VH = BIRH/w = BI/wne ------------ (8)
Measurement of Hall voltage and Hall coefficient
A rectangular slab of the given material having a thickness ‘d’ and width ‘w’ is placed between the pole pieces of an electromagnet with magnetic flux density B coinciding z-axis. A current I that coincides with X-axis is allowed to pass through the sample by connecting it to a battery.
The Hall voltage is measured by placing two probes at the centres of the bottom and top surfaces of the sample.
Hall coefficient RH = VHw/BI
A rectangular slab of the given material having a thickness ‘d’ and width ‘w’ is placed between the pole pieces of an electromagnet with magnetic flux density B coinciding z-axis. A current I that coincides with X-axis is allowed to pass through the sample by connecting it to a battery.
The Hall voltage is measured by placing two probes at the centres of the bottom and top surfaces of the sample.
Hall coefficient RH = VHw/BI

Hall effect proved that band theory of solids is more accurate than free electron theory. Hall effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. In p-type semiconductors, holes are the majority carriers.
Applications of Hall effect
To determine the type ( n-type or p-type) of semiconductors.
To determine the concentration of the carriers.
In nondestructive testing.
In Hall generators.
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